Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4840337
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Funding
- Australian Government through the Australian Renewable Energy Agency (ARENA)
- Australian Postgraduate Award
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Quasi-Steady-State Photoconductance is widely used in photovoltaics industry to measure the effective minority carrier lifetime of silicon wafers, a key material parameter affecting final solar cell efficiency. When interpreting photoconductance based lifetime measurements, it is important to account for various artefacts that can cause an over-estimation of the carrier lifetime, such as minority carrier trapping. This paper provides experimental evidence for another artefact in photoconductance lifetime measurements, affecting samples that have a conductive layer that is interrupted by lines of the opposite polarity doping, forming laterally alternating regions of p/n doping. This structure often appears in the emitter region of samples used to monitor the lifetime of interdigitated back contact cells. The cause of this artefact is linked to a reduction in the measured dark conductance. Experimental data are presented that suggest this is due to the formation of a phototransistor type structure on the samples surface, resulting in variations in conductivity under different illumination levels. (C) 2013 AIP Publishing LLC.
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