Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 43, Issue 10, Pages 6835-6847Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.6835
Keywords
SiC; epitaxial growth; step-controlled epitaxy; bulk growth; ion implantation; MOS interface; ohmic contacts; Schottky diodes; power electronic devices
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Technological breakthroughs in growth control of SiC are reviewed. Step-controlled epitaxy by using off-axis SiC 100011 substrates to grow high-quality epitaxial layer is explained in detail. The introduction of substrate off-angles brings step-flow growth, which easily makes polytype replication of SiC at rather low temperatures. Off-angle dependence, rate-determining processes, and temperature dependence of growth rate are discussed. Prediction, whether step-flow growth or two-dimensional nucleation does Occur, is given as a function of off-angle, growth temperature, and growth rate. Optical and electrical properties of undoped epitaxial layers are characterized. Impurity doping during the growth is explained. Recent progresses in peripheral technologies for realization of power electronic devices, Such as bulk growth, epitaxial growth, ion implantation, MOS interface, ohmic contacts, are introduced. Finally application to high-power electronic devices is briefly described.
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