Related references
Note: Only part of the references are listed.Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon
S. D. Carnevale et al.
APPLIED PHYSICS LETTERS (2012)
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
Akihiro Wakahara et al.
JOURNAL OF LUMINESCENCE (2012)
Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence
Santino D. Carnevale et al.
NANO LETTERS (2012)
Current path in light emitting diodes based on nanowire ensembles
F. Limbach et al.
NANOTECHNOLOGY (2012)
Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity
Shinya Kitayama et al.
JOURNAL OF APPLIED PHYSICS (2011)
Three-Dimensional GaN/AIN Nanowire Heterostructures by Separating Nucleation and Growth Processes
Santino D. Carnevale et al.
NANO LETTERS (2011)
Effect of growth conditions on Eu3+ luminescence in GaN
R. Wang et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
John Simon et al.
SCIENCE (2010)
Narrow-band deep-ultraviolet light emitting device using Al1-xGdxN
Takashi Kita et al.
APPLIED PHYSICS LETTERS (2008)
Direct evidence of trap-mediated excitation in GaN:Er3+ with a two-color experiment
Loic Bodiou et al.
APPLIED PHYSICS LETTERS (2008)
Ultraviolet photoluminescence from Gd-implanted AlN epilayers
J. M. Zavada et al.
APPLIED PHYSICS LETTERS (2006)
Spectra and energy levels of Gd3+(4f7) in AlN -: art. no. 195202
JB Gruber et al.
PHYSICAL REVIEW B (2004)
Laser action in Eu-doped GaN thin-film cavity at room temperature
JH Park et al.
APPLIED PHYSICS LETTERS (2004)
Intense ultraviolet cathodoluminescence at 318 nm from Gd3+-doped AlN
U Vetter et al.
APPLIED PHYSICS LETTERS (2003)
Spectral and time-resolved photoluminescence studies of Eu-doped GaN
EE Nyein et al.
APPLIED PHYSICS LETTERS (2003)
Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photopumping
DS Lee et al.
APPLIED PHYSICS LETTERS (2002)