4.6 Article

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 18, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4821433

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Funding

  1. U.S. Department of Energy [DE-EE0005329, ECS-0335765]
  2. U. S. National Science Foundation [CBET-1032955]
  3. Harvard University's Center for Nanoscale Systems (CNS)
  4. National Nanotechnology Infrastructure Network (NNIN)

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Band alignment is critical to the performance of heterojunction thin film solar cells. In this letter, we report band alignment studies of SnS/Zn(O,S) heterojunctions with various compositions of Zn(O,S). Valence band offsets (VBOs) are measured by femtosecond laser pump/probe ultraviolet photoelectron spectroscopy (fs-UPS) from which conduction band offsets (CBOs) are calculated by combining with band gaps obtained by optical transmission/reflection measurements. The SnS/ Zn(O,S) heterojunctions with S/Zn ratios of 0.37 and 0.50 have desirable small positive CBOs, while a ratio of 0.64 produces an undesirable large positive CBO. The results are consistent with the device performance of SnS/Zn(O,S) solar cells. (c) 2013 AIP Publishing LLC.

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