Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)

We demonstrate a strong dependence of the anisotropic magnetoresistance (AMR) on the direction of current with respect to the crystalline axes in the quaternary diluted ferromagnetic semiconductor Ga0.94Mn0.06As0.9Sb0.1. Dominant cubic and uniaxial symmetries are observed for current along the [1 (1) over bar0] and [110] crystalline directions, respectively. In addition, an anomalous temperature dependence of the symmetry and magnitude of the AMR is observed. Phenomenological analysis reveals an important contribution of a crossed cubic crystalline/non-crystalline term, which is much larger than previously observed in (Ga, Mn) As films. Possible reasons for the enhancement of this term are discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791580]