Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4821037
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Funding
- Swiss National Science Foundation (SNF)
- NCCR QSIT (National Competence Center in Research-Quantum Science and Technology)
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The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M Omega, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported. (C) 2013 AIP Publishing LLC.
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