Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4815886
Keywords
-
Categories
Funding
- Graduate School Materials Science in Mainz
- Gutenberg Research College
Ask authors/readers for more resources
For spintronic applications, such as magnetic memory and logic, magnetic thin films with high perpendicular magnetic anisotropy and spin polarization are needed. An attractive candidate material is the Heusler compound Mn3-xGa (x varying from 0 to 2). We show that there is a correlation between the degree of crystallization of thin films of Mn3-xGa (x similar to 0.9) and the magnitude of the perpendicular magnetic anisotropy. Moreover, we find that the crystallization temperature window varies with the seed layer on which the Mn3-xGa films are deposited. Seed layers of Pt, Cr, Ru, Mo and SrTiO3 were considered and the largest crystallization window was found for Pt(100) layers. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available