Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 19, Issue 10, Pages L106-L109Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/19/10/L03
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Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers' were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm(2) V-1 s(-1) at 300 K (27 000 cm(2) V-1 s(-1) at 10 K), with a density of 1.8 x 10(12) cm(-2), giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 x 10(12) cm(-2) of these holes were found to have a mobility of 2700 cm(2) V-1 s(-1) at 300 K.
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