High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers' were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm(2) V-1 s(-1) at 300 K (27 000 cm(2) V-1 s(-1) at 10 K), with a density of 1.8 x 10(12) cm(-2), giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 x 10(12) cm(-2) of these holes were found to have a mobility of 2700 cm(2) V-1 s(-1) at 300 K.