Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4813391
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Funding
- Ministry of Knowledge Economy
- National Research Foundation of Korea [NRF-2012-00109]
- Ministry of Education
- International Collaborative RD Program [M001200018]
- National Research Foundation of Korea [2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate highly stable blue-emission on the semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode (LED) that has been prepared by the direct lateral-overgrowth method. The LED clearly displays bright blue-emission (lambda similar to 441 nm) with the reduced quantum-confined Stark effect. The variation of the emission-wavelength takes place only at the small injection-current range (<10 mA), and the net variation is less than 1.3 nm for wide driving-current ranges (5-100 mA). After the stabilization of light emission, the optical power is linearly increased with increasing the driving-current (1-1.8 mW). Additionally, the LED exhibits the stable light-polarization characteristics. (C) 2013 AIP Publishing LLC.
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