Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4829064
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Funding
- Natural Science Foundation of China [NSFC 51272034]
- Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) [KFJJ201101]
- European Fund for Regional Development
- Free State of Saxony (HEIKO) [100064806]
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Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a wake-up in virgin pinched polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.
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