Performance analysis of MgO-based perpendicularly magnetized tunnel junctions

We studied state of the art perpendicularly magnetized tunnel junctions to identify performance improvement opportunities. The free layer has both a low damping and a large anisotropy. Conversely, the perpendicular remanence of the reference layer requires its encapsulation and its coupling with the hard layer. The weak pinning and low damping of the reference layer may make it prone to fluctuations induced by spin-torque. The combined optimization of the interface anisotropies on both sides of the MgO, together with the reproducibility of the interlayer exchange coupling are the main material challenges for our type of magnetic tunnel junctions. (c) 2013 AIP Publishing LLC.