Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 13, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4799660
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Funding
- SRC FCRP MARCO Materials Structures and Devices Center
- National Science Foundation under ECCS [0925844]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
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The interface trap density (D-it) and bonding at the Al2O3/InP interface was investigated using capacitance-voltage (C-V) measurements and X-ray photoelectron spectroscopy (XPS). The D-it extracted using C-V measurements show a peak near midgap and a tail, which extends into the InP conduction band. After post high-k deposition annealing, only midgap D-it increases while minimal change in conduction band D-it is observed. The magnitude of extracted D-it is higher for the Al2O3/InP interface compared to the HfO2/InP interface. XPS analysis shows that the native oxides at the Al2O3/InP interface are more phosphorous rich than for HfO2/InP interface. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799660]
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