Journal
JOURNAL OF POWER SOURCES
Volume 136, Issue 2, Pages 303-306Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jpowsour.2004.03.014
Keywords
silicon film; vacuum deposition; Li insertion/extraction; high rate capability; long cycle life
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A thin film of Si was vacuum-deposited onto a 30 mum thick Ni foil from a source of n-type of Si, the film thickness examined being 200-1500 Angstrom. Li insertion/extraction evaluation was performed mainly with cyclic voltammetry (CV) and constant current charge/discharge cycling in propylene carbonate (PC) containing 1 M LiClO4 at ambient temperature. The cycleability and the Li accommodation capacity were found to depend on the film thickness. Thinner films gave larger accommodation capacity. A 500Angstrom thick Si film gave a charge capacity over 3500 mAh g(-1) being maintained during 200 cycles under 2 C charge/discharge rate, while a 1500Angstrom film revealed around 2200 mAh g(-1) during 200 cycles under 1 C rate. The initial charge loss could not be ignored but it could be reduced by controlling the deposition conditions. (C) 2004 Elsevier B.V. All rights reserved.
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