Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4819734
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Funding
- Italian Ministry of Research [RBFR08N9L9, RBPR05JH2P_014]
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We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 mu m. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, second- and third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. (C) 2013 AIP Publishing LLC.
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