Related references
Note: Only part of the references are listed.Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots
J. Treu et al.
APPLIED PHYSICS LETTERS (2012)
Highly versatile ultra-low density GaAs quantum dots fabricated by filling of self-assembled nanoholes
D. Sonnenberg et al.
APPLIED PHYSICS LETTERS (2012)
Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes
P. Atkinson et al.
JOURNAL OF APPLIED PHYSICS (2012)
Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field
Jun-Wei Luo et al.
PHYSICAL REVIEW B (2012)
Piezoelectric InAs/GaAs quantum dots with reduced fine-structure splitting for the generation of entangled photons
Savvas Germanis et al.
PHYSICAL REVIEW B (2012)
Universal Recovery of the Energy-Level Degeneracy of Bright Excitons in InGaAs Quantum Dots without a Structure Symmetry
R. Trotta et al.
PHYSICAL REVIEW LETTERS (2012)
Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field
Mohsen Ghali et al.
NATURE COMMUNICATIONS (2012)
Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots
Johannes D. Plumhof et al.
NANOSCALE RESEARCH LETTERS (2012)
Effects of atomic ordering on the electronic and optical properties of self-assembled InxGa1-xAs/GaAs semiconductor quantum dots
Ranber Singh et al.
PHYSICAL REVIEW B (2011)
Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
Takaaki Mano et al.
APPLIED PHYSICS EXPRESS (2010)
Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation
J. D. Mar et al.
APPLIED PHYSICS LETTERS (2010)
Single-photon emission from InGaAs quantum dots grown on (111) GaAs
Erik Stock et al.
APPLIED PHYSICS LETTERS (2010)
Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes
Ch Heyn et al.
NANOSCALE RESEARCH LETTERS (2010)
Experimental investigation and modeling of the fine structure splitting of neutral excitons in strain-free GaAs/AlxGa1-xAs quantum dots
J. D. Plumhof et al.
PHYSICAL REVIEW B (2010)
Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes
P. Alonso-Gonzalez et al.
CRYSTAL GROWTH & DESIGN (2009)
Effect of atomic-scale randomness on the optical polarization of semiconductor quantum dots
Vladan Mlinar et al.
PHYSICAL REVIEW B (2009)
In(Ga)As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs
Andrei Schliwa et al.
PHYSICAL REVIEW B (2009)
Nanowire Quantum Dots as an Ideal Source of Entangled Photon Pairs
Ranber Singh et al.
PHYSICAL REVIEW LETTERS (2009)
Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)
Zh. M. Wang et al.
APPLIED PHYSICS LETTERS (2007)
Effect of uniaxial stress on excitons in a self-assembled quantum dot
Stefan Seidl et al.
APPLIED PHYSICS LETTERS (2006)
Entangled photon pairs from semiconductor quantum dots
N Akopian et al.
PHYSICAL REVIEW LETTERS (2006)
A semiconductor source of triggered entangled photon pairs
RM Stevenson et al.
NATURE (2006)
Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots -: art. no. 257402
R Seguin et al.
PHYSICAL REVIEW LETTERS (2005)
Inversion of exciton level splitting in quantum dots
RJ Young et al.
PHYSICAL REVIEW B (2005)
Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects
G Bester et al.
PHYSICAL REVIEW B (2005)
Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots -: art. no. 041907
K Kowalik et al.
APPLIED PHYSICS LETTERS (2005)
Hierarchical self-assembly of GaAs/AlGaAs quantum dots
A Rastelli et al.
PHYSICAL REVIEW LETTERS (2004)
Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing -: art. no. 161301
W Langbein et al.
PHYSICAL REVIEW B (2004)
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
AI Tartakovskii et al.
PHYSICAL REVIEW B (2004)
Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots -: art. no. 153316
JJ Finley et al.
PHYSICAL REVIEW B (2002)
Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315
M Bayer et al.
PHYSICAL REVIEW B (2002)
Fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots:: Zeeman-interaction and exchange energy enhancement
M Bayer et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2000)
Regulated and entangled photons from a single quantum dot
O Benson et al.
PHYSICAL REVIEW LETTERS (2000)