Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4826644
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Funding
- Army Research Laboratory under CRA Alliance for Multiscale Modeling for an Energy Efficient Army
- US-French initiative PUF
- Russian Foundation for Basic Research [11-02-00013]
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Project Agency (DARPA) through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME)
- National Science Foundation (NSF) [EECS-1124733, EECS-1102074]
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The low frequency 1/f noise in graphene devices was studied in a transverse magnetic field of up to B = 14 T at temperatures T = 80 K and T = 285 K. The examined devices revealed a large physical magnetoresistance typical for graphene. At low magnetic fields (B < 2 T), the level of 1/f noise decreases with the magnetic field at both temperatures. The details of the 1/f noise response to the magnetic field depend on the gate voltage. However, in the high magnetic fields (B > 2 T), a strong increase of the noise level was observed for all gate biases. (C) 2013 AIP Publishing LLC.
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