Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4828501
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Funding
- Nanoelectronic Research Initiative (NRI SWAN Center)
- Office of Naval Research
- NSF CAREER award
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1150034] Funding Source: National Science Foundation
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We report chemical vapor-deposited (CVD) graphene field-effect transistors (GFETs) on conventional SiO2/Si substrate with high-performance comparable to GFETs on boron nitride under practical ambient conditions. The fabricated GFET statistics reveal maximum carrier mobility of similar to 17800 cm(2)/V-s. Intrinsic graphene features such as three-region output characteristics including soft current saturation have also been observed, in addition to over ten-fold gate modulation. Low-temperature studies indicate that impurity scattering is the limiting transport mechanism. Our results on graphene, synthesized by an inductively heated CVD system, suggest that the prospects of GFETs on oxidized silicon are comparable to those on ideal surfaces, e.g., hBN at room temperature. (C) 2013 AIP Publishing LLC.
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