Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 19, Issue 10, Pages R59-R74Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/19/10/R01
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A review of recent results on transition metal doping of electronic oxides such as ZnO, TiO2, SnO2, BaTiO3, Cu2O, SrTiO3 and KTaO3 is presented. There is interest in achieving ferromagnetism with Curie temperatures above room temperature in such materials for applications in the field of spintronic devices, in which the spin of, the carriers is exploited. The incorporation of several atomic per cent of the transition metals without creation of second phases appears possible under optimized synthesis conditions, leading to ferromagnetism. Pulsed laser deposition, reactive sputtering, molecular beam epitaxy and ion implantation have all been used to produce the oxide-based dilute magnetic materials. The mechanism is still under debate, with carrier-induced, double-exchange and bound magnetic polaron formation all potentially playing a role depending on the conductivity type and level in the material.
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