Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4809672
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Funding
- ANR project WITH
- CNRS
- GDR-I project Semiconductor sources and detectors of THz frequencies
- US-French initiative PUF
- Scientifique Interest Groupement GIS-TERALAB
- Army Research Laboratory under ARL MSME Alliance
- RFBR
- RAS
- Marie Curie International Research Staff Exchange Scheme [612624]
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We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FETs) operating in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. The conversion efficiency of the device, Q (defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power) has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%. (C) 2013 AIP Publishing LLC.
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