Journal
PHYSICAL REVIEW B
Volume 70, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.70.165404
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The electronic structure of h-BN films grown on the Ni(111) surface has been studied as a function of film thickness using the synchrotron radiation based spectroscopic techniques: soft x-ray absorption, core-level photoemission and resonant Auger spectroscopy. A manifestation of the strong orbital hybridization between Ni 3d and h-BN pi states has been consistently observed in all spectra, implying a rather strong interfacial interaction between h-BN and the substrate. In the B 1s and N 1s near-edge x-ray absorption fine structure of both bulk h-BN and a single monolayer adsorbed on Ni(111) we observe spectral structures, which can be interpreted as a manifestation of the interlayer conduction-band states of h-BN.
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