Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4821538
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Funding
- Samsung Electronics Company
- Sandia National Laboratories (SNL)
- Department of Energy, and Applied Materials - Varian Semiconductor Equipment
- Basic Research Laboratory Program [2011-0027956]
- Priority Research Centers Program through the National Research Foundation of Korea [2009-0094031]
- Ministry of Education, Science and Technology
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The forward voltage characteristics of GaInN light-emitting diodes are studied in the temperature range of 80 K to 450 K. The forward-voltage-vs.-temperature curve has a two-slope characteristic with a slope of dV(f)/dT = -1.7 mV/K and -8.0 mV/K at room temperature and cryogenic temperatures, respectively. To investigate the two-slope characteristic, we perform transmission-line-model measurements on p-type GaN and show that both p-type contact and sheet resistance decrease drastically with increasing temperature. We conclude that dVf/dT in the high-slope region is limited by p-type sheet and contact resistance, and in the low-slope region by the GaN pn junction properties. (C) 2013 AIP Publishing LLC.
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