Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4799970
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Funding
- Royal Society
- Centre for Advanced Structural Ceramics (CASC) at Imperial College London
- Singapore National Research Foundation [NRF-NRFF2011-02]
- NSF ECCS [1128335]
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We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799970]
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