Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4729819
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Funding
- NSF [ECCS-1001431]
- Defense Advanced Research Project Agency (DARPA) [D11PC20027]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1206919] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1001431] Funding Source: National Science Foundation
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Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates grown by hydride-vapor phase epitaxy. Clear, exactly reproducible, negative-differential resistance signatures were observed from 4 x 4 mu m(2) devices at 1.5V and 1.7V at 77K. The relatively small value of the maximum peak-to-valley ratio (1.03) and the area dependence of the electrical characteristics suggest that charge transport is affected by leakage paths through dislocations. However, the reproducibility of the data indicates that electrical traps play no significant role in the charge transport in resonant tunneling diodes grown by molecular-beam-epitaxy under Ga-rich conditions on free-standing GaN substrates. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729819]
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