4.6 Article

Schottky solar cells based on CsSnI3 thin-films

Journal

APPLIED PHYSICS LETTERS
Volume 101, Issue 9, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4748888

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Funding

  1. Sun Harmonics Ltd. (CUNY-RF) [70980-01-02]
  2. NYSTAR through the Photonics Center for Applied Technology at the City University of New York (CUNY-RF) [55418-12-04]

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We describe a Schottky solar cell based on the perovskite semiconductor CsSnI3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of SnCl2 and CsI on glass substrate followed by a thermal annealing process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748888]

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