4.6 Article

Study of polarity effect in SiOx-based resistive switching memory

Journal

APPLIED PHYSICS LETTERS
Volume 101, Issue 5, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4742894

Keywords

-

Ask authors/readers for more resources

The SiOx-based resistive switching memory was realized by a simple TaN/SiO2/n(++) Si-substrate structure. Post-deposition annealing treatment not only reduced operational variation but also stabilized electrical reliability during repeated switching. The relationship between applied voltage polarity and reset switching parameters is investigated and may indicate that resistive switching occurs at the cathode side. Oxygen-vacancy clustering and asymmetrical thermal-dissipation of the electrodes are discussed as possible causes for the polarity dependence of reset switching parameters. Data retention in high- and low-resistance states was measured for over 10(4) s, indicating promising potential for future nonvolatile memory applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742894]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available