Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4757131
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- Saudi Cultural Bureau in London, UK
- King Faisal University in Al Hassa, Saudi Arabia
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We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757131]
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