Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3695036
Keywords
antimony alloys; crystallisation; metallic thin films; phase change materials; phase change memories; tellurium alloys; titanium alloys
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Funding
- National Key Basic Research Program of China [2011CBA00607, 2010CB934300]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61076121]
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With a high crystallization temperature of 211 degrees C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 degrees C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 x 10(4) with very short Set/Reset pulses of 100 ns/50 ns. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695036]
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