1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

1/f noise in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors has been measured at 300 K in strong magnetic fields up to 10 T. The devices exhibited strong geometric magnetoresistance. The magnetic-field dependence of the 1/f noise shows that fluctuations of the number of electrons is the dominant mechanism of the 1/f noise. (C) 2004 American Institute of Physics.