Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4738997
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Funding
- Air Force Office of Scientific Research [FA9550-08-10198, FA9550-09-1-0270, FA-9550-12-1-0052]
- National Science Foundation [ECCS-0824273, DMR-1007051]
- United States Department of Defense [NSSEFF N00244-09-1-0091]
- NSF Clean Energy for Green Industry IGERT [DGE-0903720]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1007051] Funding Source: National Science Foundation
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Selective-area growth of III-V nanopillars (NPs) is used to demonstrate near-infrared emitters that employ a composite axial/core-shell heterostructure. The axial p-i-n heterostructure allows growth of strain relaxed InGaAs inserts emitting at 1.3 pm. Radial growth of an InGaP shell provides in-situ surface passivation to reduce non-radiative recombination and space-charge limited transport due to mid-gap surface states. The resulting light-emitting diode is comparable to bulk devices with an ideality factor of eta = 1.67 and reverse bias leakage of 12 nA at 5 V. This device performance makes the combination of axial current injection with in-situ passivation a promising approach to NP based emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738997]
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