4.6 Article

GaN-based light-emitting diodes on origami substrates

Journal

APPLIED PHYSICS LETTERS
Volume 100, Issue 23, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4726123

Keywords

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Funding

  1. Korea Institute of Energy Technology Evaluation and Planning (KETEP)
  2. Ministry of Knowledge Economy [20104010100640]
  3. National Research Foundation of Korea (NRF) [2011-0027240]
  4. Center for Inorganic Photovoltaic Materials [2012-0001171]
  5. Korea government (MEST)
  6. U.S. Department of Commerce (NIST) [70NANB11H009]
  7. NSF

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GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system (lambda = 193 nm) to remove the sapphire substrate and produce freestanding blue LED templates. The threshold voltage (similar to 2.7 V), current-voltage characteristics, and peak emission wavelength (442 nm) were not changed after the paper substrate was subsequently wrinkled. We were able to demonstrate transfers to both planar and folded (origami) paper structures, showing the promise of the LLO process for transferring LEDs to arbitrary surfaces. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726123]

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