Related references
Note: Only part of the references are listed.Fabrication and characterization of an induced GaAs single hole transistor
O. Klochan et al.
APPLIED PHYSICS LETTERS (2010)
AlGaAs/GaAs single electron transistor fabricated without modulation doping
A. M. See et al.
APPLIED PHYSICS LETTERS (2010)
Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures
W. Y. Mak et al.
APPLIED PHYSICS LETTERS (2010)
Low temperature transport in undoped mesoscopic structures
S. Sarkozy et al.
APPLIED PHYSICS LETTERS (2009)
Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas
S. J. MacLeod et al.
PHYSICAL REVIEW B (2009)
Spin-orbit interaction and transport in GaAs two-dimensional holes
B. Habib et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Impact of long- and short-range disorder on the metallic behaviour of two-dimensional systems
W. R. Clarke et al.
NATURE PHYSICS (2008)
Transport and percolation in a low-density high-mobility two-dimensional hole system
M. J. Manfra et al.
PHYSICAL REVIEW LETTERS (2007)
Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices
Kei Takashina et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
Ballistic transport in induced one-dimensional hole systems
O. Klochan et al.
APPLIED PHYSICS LETTERS (2006)
Fabrication of induced two-dimensional hole systems on (311)A GaAs
WR Clarke et al.
JOURNAL OF APPLIED PHYSICS (2006)
Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system
S Das Sarma et al.
PHYSICAL REVIEW LETTERS (2005)
Interaction corrections to two-dimensional hole transport in the large-rs limit -: art. no. 165308
H Noh et al.
PHYSICAL REVIEW B (2003)