Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3695172
Keywords
carrier density; crystal structure; doping profiles; gallium compounds; germanium; Hall effect; III-V semiconductors; Raman spectra; secondary ion mass spectra; semiconductor doping; semiconductor growth; silicon; stress analysis; tensile strength; wide band gap semiconductors; X-ray diffraction
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Funding
- federal ministry of education and research (BMBF)
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We report on GaN n-type doping using silane, germane, and isobutylgermane as Si and Ge dopants, respectively. A significant increase in tensile stress during growth is observed for Si doped samples while this is not the case for Ge doping. In addition, Ge can be doped up to 2.9 x 10(20) cm(-3), while Si doping leads to 3-D growth already at concentrations around 1.9 x 10(19) cm(-3). The free carrier concentration was determined by Hall-effect measurements, crystal quality, and structural properties by x-ray diffraction measurements. Additionally, secondary ion mass spectroscopy and Raman measurements were performed demonstrating the high material quality of Ge doped samples. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695172]
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