Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4742897
Keywords
-
Categories
Funding
- NSFC [10902128, 10732100, 50802026, 10972239]
- New Century Excellent Talents in University
- Fundamental Research Funds for the Central Universities
- Research Fund for the Doctoral Program of Higher Education
- Fok Ying Tung Foundation
Ask authors/readers for more resources
Nanoscale Mn-doped BiFeO3 (BFMO) films are prepared by chemical solution deposition on Pt/Ti/SiO2/Si substrates. Nonpolar nonvolatile resistive switching has been observed in Pt/BFMO/Pt structure. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized traps should be of great importance to the resistance switching. X-ray photoelectron spectroscopy results suggest that the coexistence of Fe2+ and Fe3+ can be ascribed to the relatively oxygen vacancies. According to defect chemistry, the valence variation between Fe2+ and Fe3+ determined by the neutralization/ionization of oxygen vacancies is supposed to play a crucial role in conductive filament-related nonpolar resistive switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742897]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
