Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4764947
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Funding
- MEXT
- FIRST Program of JSPS
- Global CUE program [C04]
- Grants-in-Aid for Scientific Research [24686040, 23000010] Funding Source: KAKEN
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We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow an n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps to understand the mechanism of carrier-mediated ferromagnetism in FMSs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764947]
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