Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 22, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4768292
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- National Science Council of R. O. C. [NSC 101-3113-P-008-008, NSC-99-2221-E-008-095-MY3]
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An otherwise random, self-assembly of Ge quantum dots (QDs) on Si has been controlled by nano-patterning and oxidation to produce QDs with desired sizes, locations, and depths of penetration into the Si substrate. A heterostructure consisting of a thin amorphous interfacial oxide between the Ge QD and the Si substrate is shown to improve crystalline quality by de-coupling the lattice-matching constraint. A low dark current density of 1.1 mu A/cm(2) and a high photocurrent enhancement up to 35 000 and 1500, respectively, for 1.5 mW incident illumination at 850 nm and 1160 nm was measured on our Ge QD-based metal-oxide-semiconductor photodiodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768292]
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