Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4754108
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Funding
- National Science Foundation of China [11074289, 91121003]
- National Basic Research Projects (973 Projects) of China [2012CB921703, 2009CB929101]
- Hundred-Talents Project of the Chinese Academy of Sciences
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Atomically smooth, single crystalline (Bi1-xSbx)(2)Te-3 films have been grown on SrTiO3(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x = 0.5 +/- 0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi0.5Sb0.5)(2)Te-3 sample. These highly tunable (Bi1-xSbx)(2)Te-3 thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754108]
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