Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4768218
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- ONR
- Intel
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We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 10(6). The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of similar to 50 cm(2)/V.s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768218]
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