Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 25, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4730392
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Funding
- DOE-BES-DMS [DEFG02-99ER45795]
- U.S. DOE [DE-AC02-05CH11231]
- OSC
- DOE [DE-FG02-08ER46512]
- ONR grant MURI [N00014-09-1-1063]
- NRF-CRP award Novel 2D materials with tailored properties: beyond graphene [R-144-000-295-281]
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We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped h-BN. Furthermore, we show that stacking of localized impurity states in small C clusters embedded in h-BN forms a set of discrete energy levels in the wide gap of h-BN. The electronic structures of these C clusters have a plethora of applications in optics, magneto-optics, and opto-electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730392]
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