Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4709415
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Funding
- DOE [DE-FG02-07ER46382, DE-FG02-07ER46402, DE-AC02-98CH10886]
- National Research Foundation of Korea [2010-00471, 2011-0031558, 2008-0060612] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We discovered that perovskite (Ba,La) SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of similar to 8-10 x 10(19) cm(-3) is found to be similar to 103 cm(2) V-1 s(-1) at room temperature, and the precise measurement of the band gap Delta of a BaSnO3 crystal shows Delta = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba, La) SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709415]
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