Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4754003
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Funding
- 48th Chinese postdoc first class support [20100480083]
- china postdoctoral science foundation [201104714]
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We propose negatively charged oxygen species at grain boundaries may be detrimental to the p-type behavior. After ultraviolet illumination to release oxygen species, the p-type behavior of moderately Na-doped ZnO films is strengthened in the subsequent several minutes. A robust p-type film with a hole mobility of 7.9 cm(2)/Vs, a hole concentration of 2.1 x 10(17) cm(-3), and a film resistivity of 3.8 Omega cm has been reproducibly achieved. Transformation from n-type to p-type conduction is observed for the lightly Na-doped ZnO after ultraviolet illumination. We believe that single crystalline p-type ZnO films are indispensable for ZnO light-emitting diodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754003]
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