Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4734955
Keywords
-
Categories
Funding
- NIST Semiconductor and Dimensional Metrology Division
- Nanoelectronics Research Initiative through the Mid-west Institute for Nanoelectronics Discovery (MIND)
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1530723, 0846910] Funding Source: National Science Foundation
Ask authors/readers for more resources
We determined the band alignment of a graphene-insulator-semiconductor structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage, we infer a 4: 6 x 10(11) cm(-2) negative extrinsic charge present on the graphene surface. Also, we extract the graphene work function to be 4.56 eV, in excellent agreement with theoretical and experimental values in literature. Electron and hole injection from heavily doped p-type silicon (Si) are both observed. The barrier height from the top of the valence band of Si to the bottom of the conduction band of silicon dioxide (SiO2) is found to be 4.3 eV. The small optical absorption in graphene makes it a good transparent contact to enable the direct observation of hole injection from Si to graphene. The barrier height for holes escaping from the bottom of Si conduction band to the top of SiO2 valence band is found to be 4.6 eV. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4734955]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available