4.6 Article

Back-action-induced non-equilibrium effect in electron charge counting statistics

Journal

APPLIED PHYSICS LETTERS
Volume 100, Issue 9, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3691255

Keywords

aluminium compounds; gallium arsenide; III-V semiconductors; quantum point contacts; random processes; semiconductor quantum dots; tunnelling

Funding

  1. NFRP [2011CBA00200, 2011CB921200]
  2. NNSF [10934006, 11074243, 11174267, 91121014, 60921091]

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We study real-time charge-counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) subject to different back-action strengths. By tuning the QD-QPC coupling or the QPC bias, we control the QPC back-action, which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics show strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action-induced tunneling-out rate. We find that the QD-QPC coupling and QPC bias voltage play different roles in determining the back-action strength and the cut-off energy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691255]

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