Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe6 Ovonic threshold switching (OTS) device. The voltage dependence of the threshold switching process has been studied, revealing switching in less than 5 ns in the fastest case. A constant holding voltage is observed for the different voltage pulses applied, which is an indicative for a stable on state in the amorphous phase. In addition, the potential of GeTe6 devices as OTS selectors is validated. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700743]