Related references
Note: Only part of the references are listed.Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
A. Uedono et al.
JOURNAL OF APPLIED PHYSICS (2012)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban et al.
APPLIED PHYSICS EXPRESS (2011)
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
Yuki Shimahara et al.
APPLIED PHYSICS EXPRESS (2011)
Silicon concentration dependence of optical polarization in AlGaN epitaxial layers
Hideaki Murotani et al.
APPLIED PHYSICS LETTERS (2011)
Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions
S. F. Chichibu et al.
APPLIED PHYSICS LETTERS (2011)
Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
Ryan G. Banal et al.
APPLIED PHYSICS LETTERS (2011)
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
Yitao Liao et al.
APPLIED PHYSICS LETTERS (2011)
Major impacts of point defects and impurities on the carrier recombination dynamics in AlN
S. F. Chichibu et al.
APPLIED PHYSICS LETTERS (2010)
Probing the relationship between structural and optical properties of Si-doped AlN
B. N. Pantha et al.
APPLIED PHYSICS LETTERS (2010)
100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
Takao Oto et al.
NATURE PHOTONICS (2010)
Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
A. Bhattacharyya et al.
APPLIED PHYSICS LETTERS (2009)
Tensile stress generation and dislocation reduction in Si-doped AlxGa1-xN films
I. C. Manning et al.
JOURNAL OF APPLIED PHYSICS (2009)
Efficiency of light emission in high aluminum content AlGaN quantum wells
Max Shatalov et al.
JOURNAL OF APPLIED PHYSICS (2009)
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hideki Hirayama et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films
Jeremy D. Acord et al.
APPLIED PHYSICS LETTERS (2008)
Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x > 0.5) multiple quantum wells
Da-Bing Li et al.
JOURNAL OF CRYSTAL GROWTH (2007)
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V Lebedev et al.
JOURNAL OF APPLIED PHYSICS (2005)
Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques
T Onuma et al.
JOURNAL OF APPLIED PHYSICS (2004)
Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes
S Watanabe et al.
APPLIED PHYSICS LETTERS (2003)
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
P Cantu et al.
APPLIED PHYSICS LETTERS (2003)
Achieving highly conductive AlGaN alloys with high Al contents
KB Nam et al.
APPLIED PHYSICS LETTERS (2002)