Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4739431
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Funding
- Japan Society for the Promotion Science [23860062]
- Ministry of Education, Culture, Sports, Science and Technology of Japan [21016005]
- Grants-in-Aid for Scientific Research [21016005, 23860062] Funding Source: KAKEN
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The internal quantum efficiency (IQE) of Si-doped AlGaN quantum wells has been studied by means of photoluminescence spectroscopy. Analysis of the IQE as a function of doping region revealed that the IQE increased from 19% to 40% with doping of the well layers. This increase was attributed to an improvement in the interface quality between well and barrier layers as well as a reduction in point defect density. Moreover, the IQE increased to a maximum of 50% and then decreased with increasing Si concentration of the well layers. This indicated the existence of an optimum Si concentration for IQE improvement. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739431]
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