Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4731271
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Funding
- Chinese National Program on Key Basic Research Project [2012CB933003]
- National Natural Science Foundation of China [11104289]
- Science and Technology Innovative Research Team of Ningbo Municipality [2009B21005]
- Key Program for Science and Technology Innovative Team of Zhejiang Province [2010R50020]
- Applied Research Funds for Public Welfare Project of Zhejiang Provience [2011C21030]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1002178] Funding Source: National Science Foundation
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Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731271]
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