4.6 Article

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Journal

APPLIED PHYSICS LETTERS
Volume 100, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3677669

Keywords

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Funding

  1. Research Grant Council of the HKSAR [HKU10/CRF/08, 605011, 706110P]
  2. UGC of the HKSAR [SEG_CUHK06]

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Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677669]

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