Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4739082
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- Nanometer Structure Consortium at Lund University (nmC@LU)
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation (KAW)
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The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]
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