4.6 Article

Band gap engineering in BiNbO4 for visible-light photocatalysis

Journal

APPLIED PHYSICS LETTERS
Volume 100, Issue 18, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4709488

Keywords

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Funding

  1. Swedish Research Council (VR and FORMAS)
  2. Wenner Gren foundation
  3. Leading Foreign Research Institute through the National Research Foundation of Korea (NRF)
  4. Ministry of Education, Science and Technology (MEST) [2010-00218, 2010-0000751]
  5. National Research Foundation of Korea [2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We have investigated the electronic structure of anionic mono- (S, N, and C) and co-doping (N-N, C-N, S-C, and S-N) on BiNbO4 for the visible-light photocatalysis. The maximum band gap reduction of pure BiNbO4 is possible with the (C-S) co-doping and minimum with N mono-doping. The calculated binding energies show that the co-doped systems are more stable than their mono-doped counterparts. Our optical absorption curves indicate that the mono- (C) and co-anionic doped (N-N and C-S) BiNbO4 systems are promising materials for visible light photocatalysis. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709488]

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