Related references
Note: Only part of the references are listed.Ultra-thin high-quality silicon nitride films on Si(111)
J. Falta et al.
EPL (2011)
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
Rafael Mata et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
Karine Hestroffer et al.
PHYSICAL REVIEW B (2011)
Epitaxial growth of β-Si3N4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111)
Nobuhiko Yamabe et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 (2011)
Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy
Kris A. Bertness et al.
ADVANCED FUNCTIONAL MATERIALS (2010)
Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
G. Radtke et al.
APPLIED PHYSICS LETTERS (2010)
In situ investigation of self-induced GaN nanowire nucleation on Si
C. Cheze et al.
APPLIED PHYSICS LETTERS (2010)
Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
X. J. Chen et al.
APPLIED PHYSICS LETTERS (2010)
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V. Consonni et al.
PHYSICAL REVIEW B (2010)
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
S. Fernandez-Garrido et al.
JOURNAL OF APPLIED PHYSICS (2009)
Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
O. Landre et al.
NANOTECHNOLOGY (2009)
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy -: The influence of Si- and Mg-doping
Florian Furtmayr et al.
JOURNAL OF APPLIED PHYSICS (2008)
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
K. A. Bertness et al.
JOURNAL OF CRYSTAL GROWTH (2008)
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
Jelena Ristic et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
L. Largeau et al.
NANOTECHNOLOGY (2008)
Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires
Toma Stoica et al.
SMALL (2008)
From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
R. Songmuang et al.
APPLIED PHYSICS LETTERS (2007)
Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source
S. Vezian et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
R. K. Debnath et al.
APPLIED PHYSICS LETTERS (2007)
Nucleation conditions for catalyst-free GaN nanowires
K. A. Bertness et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions
YS Park et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/beta-Si3N4(0001) double-buffer structure
CL Wu et al.
APPLIED PHYSICS LETTERS (2003)
Thermal nitridation of the Si(111)-(7X7) surface studied by scanning tunneling microscopy and spectroscopy
CL Wu et al.
PHYSICAL REVIEW B (2002)
Structure determination of the Si3N4/Si(111)-(8 x 8) surface:: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations
H Ahn et al.
PHYSICAL REVIEW LETTERS (2001)